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Products Detail

Item Name: FLL120MK
Guide FLL120MK


L-Band Medium & High Power GaAs FET



• High Output Power: P1dB = 40.0dBm (Typ.)

• High Gain: G1dB = 10.0dB (Typ.)

• High PAE: add = 40% (Typ.)

• Proven Reliability

• Hermetically Sealed Package



The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsus stringent Quality Assurance Program assures the highest reliability and consistent performance.