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Products Detail

Item Name: MEMS Filter Chip
Guide

Features

MEMS -Manufacturing

Multilayer Si-Si bonding

50CPW Input/Output

High-performance/Si Cavity Structure for Fully Shield Anti-interference

Wire bonding, easier for MCM

Environment Parameter

Working Temperature -55~+85
Storage Temperature -55~+125
CW Power 3W max @25

 

Electrical Characteristic (TA=+25)

Center Frequency 260GHz
BW1dB 1~100%
Insertion Loss@fo IL0
VSWR 1.6
Impedance 50
Rectangle Factor(6 section) BW30dB/ BW3dB1.7
BW40dB/ BW3dB2
BW50dB/ BW3dB2.3

 

Estimated Center Insertion Loss: IL0=KN/BW(100%)+0.2

K=3.5(1dB Fractional Bandwidth 120%)

K=4.5(1dB Fractional Bandwidth 20100%)

N: filter section BW(100%)= BW1dB/f0100

 

Model I. L.@f0 BW1dB Attenuation Size(mm)
(dB) (GHz) (dB)
SiBP6R5/1-6D2 1.8 6.0-7.0 40dB@5.1&7.8GHz 6.55.50.84
SiBP7R4/R6-6D2 2 7.12-7.7 40dB@6.35&8.4GHz 960.42
SiBP9R6/1-7D3 1.8 9.1-10.1 40dB@8.2&10.9GHz 74.10.84
SiBP10R4/1-7D3 1.9 9.9-10.9 40dB@8.9&11.7GHz 73.90.84
SiBP11R65/1R5-6D2 1.5 10.9-12.4 40dB@8&13.8GHz 54.20.84
SiBP14R15/1R9-6D2 2.2 13.2-15.1 40dB@12.2&16.0GHz 840.84
SiBP15/2R1-7D2 2 14-16 40dB@12.3&17.5GHz 730.84
SiBP22R45/1R9-6D2 1.5 21.5-23.4 40dB@10&25.2 GHz 530.84
SiBP26R1/3R8-6D2 1.5 24.2-28.0 35dB@20.92&30.67 GHz 73.40.84
SiBP28/6-7D2 1 25.2-31.2 40dB@21&34.4 GHz 73.50.84